Simulation study on electrical characteristic of AlGaN/GaN high electron mobility transistors with AlN spacer layer

Enhancement of Drain Current by an AlN Spacer Layer Insertion in AlGaN/GaN High-Electron-Mobility Transistors with Si-Ion-Implanted Source/Drain Contacts

(2013) Takuma Nanjo et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Analysis of Interface Scattering in AlGaN/GaN/InGaN/GaN Double-Heterojunction High-Electron-Mobility Transistors

(2012) Lin Wang et al.   JOURNAL OF ELECTRONIC MATERIALS

Novel Metamorphic HEMTs With Highly Doped InGaAs Source/Drain Regions for High Frequency Applications

(2010) Kartika Chandra Sahoo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Drivability Enhancement for AlGaN/GaN High-Electron Mobility Transistors with AlN Spacer Layer Using Si Ion Implantation Doping

(2009) Takuma Nanjo et al.   Applied Physics Express

The effect of AlN interlayer thicknesses on scattering processes in lattice-matched AlInN/GaN two-dimensional electron gas heterostructures

(2009) A Teke et al.   NEW JOURNAL OF PHYSICS

The influence of 1nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure

(2008) Lunchun Guo et al.   MICROELECTRONICS JOURNAL