Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 52, Issue 3, Pages -Publisher
JAPAN SOC APPLIED PHYSICS
DOI: 10.7567/JJAP.52.031601
Keywords
-
Categories
Funding
- Dongguk University Research Fund
Ask authors/readers for more resources
We report high-performance ink-jet-printed 2,8-difluoro-5,11-bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) organic thin-film transistors (OTFTs) facilitated by polymer blending. The film morphology and crystal structure of diF-TESADT films were greatly improved by printing on a predeposited poly(alpha-methyl styrene) (P alpha MS) layer possibly due to the confined droplet area and thus increased intermolecular interactions. Additionally, partial dewetting and the formation of irregular film shapes were effectively controlled resulting in uniform and improved device performance in the predeposited blending system. Through a proper optimization of printing parameters such as substrate temperature and processing solvent, diF-TESADT TFTs with an average field-effect mobility of 0.34 +/- 0.13 cm(2) V-1 s(-1) (max 0.64 cm(2) V-1 s(-1)) and subthreshold slope of 0.456 +/- 0.090 V decade(-1) have been achieved. (c) 2013 The Japan Society of Applied Physics
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available