High Mobility P-Channel Thin-Film Transistors with Ultralarge-Grain Polycrystalline Silicon Formed Using Nickel-Induced Crystallization

Published 2012 View Full Article

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Title
High Mobility P-Channel Thin-Film Transistors with Ultralarge-Grain Polycrystalline Silicon Formed Using Nickel-Induced Crystallization
Authors
Keywords
-
Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 51, Issue -, Pages 09MF01
Publisher
Japan Society of Applied Physics
Online
2012-09-21
DOI
10.1143/jjap.51.09mf01

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