Epitaxial Graphene on Si(111) Substrate Grown by Annealing 3C-SiC/Carbonized Silicon

High-quality epitaxial graphene has been a continuous focus of research interest owing to its viable device applications. Epitaxial graphene growth on silicon (Si) substrates is of great interest for its application to electronics. Here, we report experimental findings of atmospheric-pressure-grown epitaxial graphene on 3C-SiC(111)/carbonized Si(111) substrates. X-ray photoelectron spectroscopy and Raman spectroscopy were used for surface structural analysis and graphitic composition analysis. A Raman mapping image of the Lorentzian width of the 2D peak of graphene grown at 1300 degrees C signals the coexistence of single layers and multilayers. Transmission electron microscopy also confirmed the existence of monolayer graphene. (C) 2012 The Japan Society of Applied Physics