Characterization of GaN-Based Light Emitting Diodes Grown on 4-in. Si(111) Substrate

Published 2012 View Full Article

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Title
Characterization of GaN-Based Light Emitting Diodes Grown on 4-in. Si(111) Substrate
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 51, Issue 1, Pages 01AG02
Publisher
Japan Society of Applied Physics
Online
2012-01-20
DOI
10.1143/jjap.51.01ag02
References
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