Temperature Dependence of CuGaO2 Films Fabricated by Sol-Gel Method

P-type CuGaO2 films have been fabricated on silicon substrates by the sol-gel method. The stable sol solutions for CuGaO2 growth were developed by the mixing of Cu-O and Ga-O sol solutions using copper(II) acetate monohydrate and tris(acetylacetonato) gallium(III), respectively. Phase separation in CuGaO2 films depends on the sol solution temperature and postbake temperature and duration. CuGaO2 films without a CuO phase were fabricated by postbaking at temperatures of approximately 800 degrees C for 1 h in N-2 atmosphere. The sol-gel-derived CuGaO2 films show high transparency of more than 80% in the visible range, and the energy gap is approximately 3.6 eV. (C) 2012 The Japan Society of Applied Physics