Atomic Layer Deposited Co(W) Film as a Single-Layered Barrier/Liner for Next-Generation Cu-Interconnects

Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation

(2011) Hideharu Shimizu et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Characterization of “Ultrathin-Cu”/Ru(Ta)/TaN Liner Stack for Copper Interconnects

(2010) C.-C Yang et al.   IEEE ELECTRON DEVICE LETTERS

Amorphous RuW Film as a Diffusion Barrier for Advanced Cu Metallization

(2010) Jia-Bin Yeh et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaN[sub x] on Adhesion with Copper

(2010) Chih-Chieh Chang et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Effect of Phosphorus and Carbon Incorporation in Amorphous Cobalt Films Prepared by Chemical Vapor Deposition

(2009) Lucas B. Henderson et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Nanocrystalline cobalt-based films with high thermal stability from a single molecule

(2009) Lucas B. Henderson et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Copper diffusion in TaN-based thin layers

(2008) J. Nazon et al.   APPLIED SURFACE SCIENCE

Effectiveness of Ta Addition on the Performance of Ru Diffusion Barrier in Cu Metallization

(2008) Chun-Wei Chen et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Thermal Stability and Interface Diffusion Behaviors of Electrolessly Deposited CoWP and Cu Films

(2008) Shou-Yi Chang et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Time-to-failure analysis of 5 nm amorphous Ru(P) as a copper diffusion barrier

(2008) Lucas B. Henderson et al.   THIN SOLID FILMS