Article
Engineering, Electrical & Electronic
Bo Yu, Carlos A. Favela, Sicong Sun, Sahil Sharma, Chuanze Zhang, Tanguy Terlier, Jinghong Chen, Venkat Selvamanickam
Summary: This article presents the performance of flexible high-temperature polycrystalline silicon thin-film transistors fabricated on metal foils, demonstrating high saturation mobility and mechanical robustness after bending cycles. Technologycomputer-aided design simulations reveal the impact of parasitic resistance and defect density on device performance under different doping temperatures.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Hong-Yi Tu, Ting-Chang Chang, Yu-Ching Tsao, Mao-Chou Tai, Yu-Zhe Zheng, Yu-Fa Tu, Chuan-Wei Kuo, Chia-Chuan Wu, Yu-Lin Tsai, Tsung-Ming Tsai, Chih-Chih Lin, Ya-Ting Chien
Summary: This study investigates the abnormal degradation of low-temperature polycrystalline-silicon thin-film transistors on a polyimide flexible substrate after hot carrier stress. The degradation mechanism is divided into two stages, with the first stage causing an increase in capacitance and transconductance, and a positive shift in threshold voltage. The second stage is characterized by a negative shift in threshold voltage and a decrease in transconductance, attributed to negative bias temperature instability induced by Joule heating.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Jongsu Oh, Jin-Ho Kim, Jungwoo Lee, Eun Kyo Jung, Donggun Oh, Jongsul Min, Hwarim Im, Yong-Sang Kim
Summary: The study introduces a novel low-temperature polycrystalline silicon thin-film transistor pixel circuit for PWM-based mu LED displays. It achieves 10-bit gray levels without wavelength shift and compensates for V-TH variations, offering a solution to color distortions in mu LED displays.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Materials Science, Multidisciplinary
Yu-Xuan Wang, Mao-Chou Tai, Ting-Chang Chang, Chia-Chuan Wu, Yu-Zhe Zheng, Yu-Fa Tu, Kuan-Ju Zhou, Yu-Shan Shih, Yu-An Chen, Jen-Wei Huang, Simon Sze
Summary: This study proposes a novel structural design of p-type low-temperature polycrystalline silicon thin-film transistors (p-type LTPS TFTs) for display pixel structures. The design improves the aperture ratio, satisfies high-resolution demands, and exhibits higher performance and reliability properties.
ADVANCED MATERIALS TECHNOLOGIES
(2022)
Article
Engineering, Electrical & Electronic
William Cheng-Yu Ma, Chun-Jung Su, Kuo-Hsing Kao, Yao-Jen Lee, Ju-Heng Lin, Pin-Hua Wu, Jui-Che Chang, Cheng-Lun Yen, Hsin-Chun Tseng, Hsu-Tang Liao, Yu-Wen Chou, Min-Yu Chiu, Yan-Qing Chen
Summary: This work demonstrates the construction of nonvolatile memory based on tunnel thin-film transistors and a ferroelectric HfZrOx layer. The memory exhibits sufficient electrical performance and can be integrated with smart wearable devices for edge computing applications.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Physics, Applied
Peng Zhang, Emmanuel Jacques, Regis Rogel, Laurent Pichon, Olivier Bonnaud
Summary: This article proposes a new configuration of P and N type polycrystalline silicon vertical TFTs to increase the driving current, and demonstrates its potential application in CMOS circuits.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2022)
Article
Engineering, Electrical & Electronic
Nairi Liang, Dongli Zhang, Mingxiang Wang, Huaisheng Wang, Yining Yu, Dongyu Qi
Summary: Research has shown that under positive bias stress (PBS), the transfer characteristic curve of polycrystalline silicon thin-film transistors (TFTs) shifts towards the negative gate bias direction, with a recoverable degradation process that initially proceeds at a fast rate before slowing down. Further acceleration of recovery can be achieved at higher temperatures or by applying a negative gate bias. The proposed degradation mechanism involves the generation of protons in the gate oxide and their accumulation at the channel/gate oxide interface.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Chemistry, Physical
Taiki Kataoka, Yusaku Magari, Hisao Makino, Mamoru Furuta
Summary: The study demonstrated the conversion of a metallic indium oxide film into a nondegenerate semiconductor indium oxynitride film. By solid-phase crystallization, the Hall mobility was increased and carrier density was reduced, leading to improved field effect mobility in oxide thin film transistors.
Article
Engineering, Electrical & Electronic
Chanhee Han, Hyojung Kim, Dongbhin Kim, Jaewoo Shin, Yubin Park, Changwoo Byun, Byoungdeog Choi
Summary: In order to ensure reliable device operation, it is necessary to secure a high bending reliability influenced by tensile and compressive forces that vary depending on the bending radius of curvature. This study investigated the electrical characteristics of flexible low-temperature polycrystalline silicon (LTPS) and amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) on polyimide (PI) substrate and conducted reliability evaluation of the devices under mechanical stress by applying negative bias temperature illumination stress (NBTIS).
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Yuyang Yang, Meng Zhang, Lei Lu, Man Wong, Hoi-Sing Kwok
Summary: This study characterizes and investigates the low-frequency noise (LFN) of bridged-grain polycrystalline silicon thin-film transistors (TFTs) for the first time. The noise power spectral density of drain current follows the classical 1/f noise theory, dominated by carrier number with correlated mobility fluctuation model. Compared to normal TFTs, BG TFTs exhibit a much smaller level of LFN, mainly attributed to grain boundary barrier lowering and trap density reduction.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Electrical & Electronic
Hwarim Im, Jeong Hyun Ahn, Won-Young Kim, Tae Eun Ha, Eun Kyung Jo, Yunjung Oh, Myoung Geun Cha, Sanggun Choi, Jun Hyung Lim, Yong-Sang Kim
Summary: By optimizing the annealing process, the annealing temperature for flexible low-temperature polycrystalline silicon thin-film transistors was reduced to improve electrical performance and reliability. Lowering the activation annealing temperature decreases threshold voltage and field-effect mobility while increasing subthreshold swing.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2022)
Article
Materials Science, Ceramics
Qian Zhang, Cheng Ruan, Hongyu Gong, Guodong Xia, Sumei Wang
Summary: This study successfully fabricated low-temperature high-mobility ZTO thin films and TFTs using a lightwave-activation process, demonstrating excellent electrical properties and stability, highlighting the potential applications in flexible display technology.
CERAMICS INTERNATIONAL
(2021)
Article
Engineering, Electrical & Electronic
Peng Zhang, Emmanuel Jacques, Regis Rogel, Laurent Pichon, Olivier Bonnaud
Summary: This article proposes a thin film transistor (TFT) device incorporating a buried electrode, which can increase driving current by reducing channel length and maintaining mobility, as well as suppress the Schottky barrier at source/drain contacts to improve on/off current ratio. However, further optimization is needed to reduce off-current due to weakened electric field at source/drain sides.
JOURNAL OF ELECTRONIC MATERIALS
(2022)
Article
Materials Science, Multidisciplinary
Youngrok Kim, Dongbhin Kim, Jinha Ryu, Jaewoo Shin, Saemi Lee, Byoungdeog Choi
Summary: The high performance and reliability of low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) on flexible substrates are crucial for advanced flexible organic light-emitting diode (OLED) displays. However, the heat-sensitive components of flexible LTPS TFTs present challenges in temperature management during the fabrication process, particularly activation annealing. This study investigates the optimization of activation annealing through temperature modulation and highlights the importance of fine temperature control for highly performant and reliable LTPS TFTs on flexible substrates.
Article
Engineering, Electrical & Electronic
Yu-Xuan Wang, Ting-Chang Chang, Mao-Chou Tai, Chia-Chuan Wu, Yu-Fa Tu, Jian-Jie Chen, Wei-Chen Huang, Yu-Shan Shih, Yu-An Chen, Jen-Wei Huang, Simon Sze
Summary: This study investigates the effects of different lighting conditions on transfer characteristics of LTPS TFTs during NBTS, revealing that degradation varies depending on whether the devices are subjected to NBTS in a darkened or UV environment. The phenomenon is mainly attributed to light-generated electrons recombining with inversed holes, leading to a lower degree of degradation. Additionally, the impact of UV light is found to be an edge effect at different channel lengths.
IEEE ELECTRON DEVICE LETTERS
(2021)