Characteristics of Vanadium Oxide Thin Films Prepared by Metal-Organic Decomposition for Bolometer Detectors

Highly axis-oriented V2O5 thin films were fabricated by metal-organic decomposition (MOD) on SiO2/Si substrates. V2O5 thin films were reduced to VOx thin films by heat treatment with a temperature of 530-580 degrees C, pressure of 1.2-3 Pa in O-2 and heating time of 2-5 h. The VOx thin films exhibited an abrupt transition, with a resistivity change of up to 3 orders of magnitude at a transition temperature of about 55 degrees C. The hysteresis loop width in the transition was about 3 degrees C. The grain size of the VOx thin films with an abrupt transition was 200-300 nm. Furthermore, these films had a temperature coefficient of resistivity (TCR) of up to 2.2%/ K at 300 K. (C) 2011 The Japan Society of Applied Physics