Transparent Oxide Thin-Film Transistors Using n-(In2O3)0.9(SnO2)0.1/InGaZnO4Modulation-Doped Heterostructures

Published 2011 View Full Article

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Title
Transparent Oxide Thin-Film Transistors Using n-(In2O3)0.9(SnO2)0.1/InGaZnO4Modulation-Doped Heterostructures
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 50, Issue 4, Pages 04DF11
Publisher
Japan Society of Applied Physics
Online
2011-04-26
DOI
10.1143/jjap.50.04df11

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