Fabrication of Transparent p-Type CuxZnyS Thin Films by the Electrochemical Deposition Method

CuxZnyS thin films were deposited on indium-tin oxide-coated glass substrates by the electrochemical deposition (ECD) method using aqueous solutions containing CuSO4, ZnSO4, and Na2S2O3. The film deposited under optimum conditions exhibited a high optical transmission, and its energy band gap was about 3.2 eV. It was confirmed that CuxZnyS showed p-type conduction and photosensitivity. To fabricate a ZnO/CuxZnyS heterojunction, an n-type ZnO thin film was deposited on CuxZnyS by ECD. In a current-voltage measurement, the heterojunction showed rectification properties. (C) 2011 The Japan Society of Applied Physics