Fabrication of Ge Metal–Oxide–Semiconductor Capacitors with High-Quality Interface by Ultrathin SiO2/GeO2Bilayer Passivation and Postmetallization Annealing Effect of Al
Fabrication of Ge Metal–Oxide–Semiconductor Capacitors with High-Quality Interface by Ultrathin SiO2/GeO2Bilayer Passivation and Postmetallization Annealing Effect of Al
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