Ambipolar Behavior in Epitaxial Graphene-Based Field-Effect Transistors on Si Substrate

Published 2010 View Full Article

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Title
Ambipolar Behavior in Epitaxial Graphene-Based Field-Effect Transistors on Si Substrate
Authors
Keywords
-
Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 49, Issue 6, Pages 06GG01
Publisher
Japan Society of Applied Physics
Online
2010-06-21
DOI
10.1143/jjap.49.06gg01

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