Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel Field-Effect Transistors on SiC Layer Grown on Silicon Substrates

Published 2010 View Full Article

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Title
Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel Field-Effect Transistors on SiC Layer Grown on Silicon Substrates
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 49, Issue 4, Pages 04DF17
Publisher
Japan Society of Applied Physics
Online
2010-04-20
DOI
10.1143/jjap.49.04df17

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