Electrical Properties of Yttrium–Indium–Zinc-Oxide Thin Film Transistors Fabricated Using the Sol–Gel Process and Various Yttrium Compositions

Published 2010 View Full Article

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Title
Electrical Properties of Yttrium–Indium–Zinc-Oxide Thin Film Transistors Fabricated Using the Sol–Gel Process and Various Yttrium Compositions
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 49, Issue 3, Pages 03CB01
Publisher
Japan Society of Applied Physics
Online
2010-03-24
DOI
10.1143/jjap.49.03cb01

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