High-Brightness 350 nm Ultraviolet InAlGaN Light Emitting Diodes on Si(111) Substrate with Transparent AlN/AlGaN Buffer Structure

Published 2010 View Full Article

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Title
High-Brightness 350 nm Ultraviolet InAlGaN Light Emitting Diodes on Si(111) Substrate with Transparent AlN/AlGaN Buffer Structure
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 49, Issue 3, Pages 032101
Publisher
Japan Society of Applied Physics
Online
2010-03-24
DOI
10.1143/jjap.49.032101

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