Reduction of Accumulation Capacitance in Direct-Contact HfO2/p-Type Si Metal–Oxide–Semiconductor Capacitors

Published 2010 View Full Article

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Title
Reduction of Accumulation Capacitance in Direct-Contact HfO2/p-Type Si Metal–Oxide–Semiconductor Capacitors
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 49, Issue 6, Pages 060202
Publisher
Japan Society of Applied Physics
Online
2010-06-07
DOI
10.1143/jjap.49.060202

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