Article
Engineering, Electrical & Electronic
Zuoxu Yu, Guangan Yang, Hansong Xu, Jie Cao, Hao Tian, Tingrui Huang, Yong Xu, Huabin Sun, Weifeng Sun, Wangran Wu
Summary: In this article, an amorphous indium-gallium zinc oxide (a-IGZO) inverter integrated with enhancement-mode (E-mode) and depletion-mode (D-mode) thin-film transistors (TFTs) is demonstrated, achieving a record high voltage gain of 372 V/V. The D-mode a-IGZO TFTs are realized through local hydrogen plasma treatment, which introduces hydrogen doping in the a-IGZO film. X-ray photoelectron spectroscopy (XPS) measurements confirm that the hydrogen doping process increases oxygen vacancies and free electron concentration in the a-IGZO, resulting in a negative shift in threshold voltage (V-th) and an improvement in the field effect mobility (mu(FE)). A D-mode load inverter is fabricated by carefully optimizing the process of hydrogen plasma treatment, and it exhibits excellent performance, including a wide output swing range, a narrow transition region, and a remarkable voltage gain of 372 V/V.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Computer Science, Information Systems
Chang Liu, Yiming Liu, Song Wei, Yi Zhao
Summary: This study investigates the impact of gate voltage sampling interval and various difference approximation methods on extracting subthreshold swing values for InGaZnO TFTs. An empirical formula is proposed to estimate the proper sampling interval for accurate approximating the subthreshold swing. The findings and methods presented in this work could provide valuable references for extracting subthreshold swing and other parameters in InGaZnO TFTs.
Article
Engineering, Electrical & Electronic
Yining Yu, Nannan Lv, Dongli Zhang, Yiran Wei, Mingxiang Wang
Summary: The letter discusses how the carrier mobility of amorphous InGaZnO thin-film transistors was enhanced by introducing nitrogen and forming Zn3N2, with a saturation field-effect mobility of 61.6 cm(2)/Vs. However, annealing at 400 degrees C led to a decrease in mobility to 4.1 cm(2)/Vs due to the formation of defective ZnxNy. Additionally, the enhanced mobility of a-IGZO TFTs did not exhibit persistent photoconductivity behavior, making them suitable for functional circuits in active-matrix displays.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Chemistry, Physical
Md Mehedi Hasan, Samiran Roy, Eisuke Tokumitsu, Hye-Yong Chu, Sung Chul Kim, Jin Jang
Summary: By employing one-step annealing, we successfully induced ferroelectricity in spray coated ZrO2 with sputtered amorphous InGaZnO (a-IGZO) capping layer, achieving a large memory window of 1.5 V, high I-ON/I-OFF ratio of 1 x 10(7), and steep subthreshold swing (SS) of 0.12 V/decade. The low thermal expansion coefficient of a-IGZO helped induce the polar orthorhombic phase in the underlying ZrO2 layer by providing suitable mechanical stress. This work provides a new approach for inducing ferroelectricity in ZrO2 for high performance ferroelectric thin film transistors.
APPLIED SURFACE SCIENCE
(2023)
Article
Chemistry, Physical
Wengao Pan, Yunping Wang, Yanxin Wang, Zhihe Xia, Fion Sze Yan Yeung, Man Wong, Hoi Sing Kwok, Xinwei Wang, Shengdong Zhang, Lei Lu
Summary: In this work, the multiple effects of hydrogen (H) doping on amorphous InGaZnO (IGZO) TFTs were investigated. The H content influenced the electrical performances of the TFTs, acting as a defect suppressor, donor defect, transition state, and finally an acceptor defect. The oxygen vacancy (Vo) in IGZO determined the diffusion channel of the H dopant and its concentration. Additionally, fluorine (F) doping improved the hydrogen resistibility of IGZO.
JOURNAL OF ALLOYS AND COMPOUNDS
(2023)
Article
Materials Science, Multidisciplinary
Xiaofen Xu, Gang He, Leini Wang, Wenhao Wang, Shanshan Jiang, Zebo Fang
Summary: This work presents a solution-processed high-performance graphene quantum dots decorated amorphous InGaZnO thin-film transistor. Experimental results demonstrate the superior performance and stability of the device, as well as its potential application in logic circuits.
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
(2023)
Article
Engineering, Electrical & Electronic
Kazushige Takechi, Feipeng Lin, Shui He, Yong Yuan, Jun Tanaka, Kenji Sera
Summary: In this study, top-gate InGaZnO thin-film transistors with boron implantation in the source-drain regions were discussed, focusing on channel shortening. It was found that boron implantation induced channel shortening in InGaZnO TFTs, but optimizing the acceleration voltage in the implantation process could suppress this effect, leading to good operation in short-channel InGaZnO TFTs.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
C. Zhang, D. Li, P. T. Lai, X. D. Huang
Summary: This study investigates a new type of charge-trapping nonvolatile memory (NVM) that has the same structure as a thin-film transistor (TFT). The NVM uses metal-hydroxyl (M-OH) defects in the back channel for charge storage. Devices with different M-OH content were prepared by changing thermal treatment. The high M-OH content device shows good NVM performance, while the low M-OH content device exhibits good TFT characteristics.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Chang Liu, Houyun Qin, Yiming Liu, Song Wei, Hongbo Wang, Yi Zhao
Summary: The InGaZnO thin film transistor with organosilicon passivation layer (PVL) showed improved performance with high mobility, low subthreshold swing, good threshold voltage, and I-on/I-off ratio. The PVL also reduced threshold voltage shift under positive and negative bias stress conditions.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2021)
Article
Engineering, Electrical & Electronic
Guangan Yang, Hao Tian, Zuoxu Yu, Tingrui Huang, Yong Xu, Huabin Sun, Weifeng Sun, Wangran Wu
Summary: A voltage reference circuit based on amorphous InGaZnO thin-film transistors has been reported, achieving a 1-V reference voltage with low quiescent consumption and stable temperature characteristics.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Materials Science, Multidisciplinary
Jinbaek Bae, Arqum Ali, Jin Jang
Summary: Spray-pyrolyzed amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) with self-aligned (SA) coplanar structure exhibits excellent performance and stability, making it a promising metal oxide semiconductor for high-performance TFT backplanes.
ADVANCED MATERIALS TECHNOLOGIES
(2023)
Article
Chemistry, Multidisciplinary
Yongchun Zhang, Gang He, Leini Wang, Wenhao Wang, Xiaofen Xu, Wenjun Liu
Summary: This study proposes a low-temperature fabrication strategy for high-performance alpha-IGZO TFTs using an ultraviolet-assisted oxygen ambient rapid thermal annealing method (UV-ORTA). The experimental results show that the UV-ORTA treatment effectively suppresses defects and produces high-quality films similar to those treated at high temperatures. The alpha-IGZO/HfAIO TFTs fabricated using this method exhibit high-performance and low-voltage operation at a low temperature of 180 degrees C. A low-voltage resistor-loaded unipolar inverter based on the alpha-IGZO/HfAIO TFT demonstrates full swing characteristics and a high gain of 13.8.
Article
Engineering, Electrical & Electronic
Qing Li, Czang-Ho Lee, Mohsen Asad, William S. Wong, Manoj Sachdev
Summary: The article proposes new logic gate designs to alleviate implementation issues in thin-film transistor technology, demonstrating the fabrication of a three-to-eight decoder and a column of pixel circuits on flexible plastic substrates, with simulation and measurement results showing improved performance compared to conventional implementations.
IEEE JOURNAL OF SOLID-STATE CIRCUITS
(2021)
Article
Engineering, Electrical & Electronic
Arqum Ali, Md. Mobaidul Islam, Jinbaek Bae, Jin Jang
Summary: Spray pyrolysis is used to fabricate high-performance and crystalline InGaZnO thin-film transistors (TFTs) with excellent stability. The TFTs exhibit high saturation mobility, low subthreshold swing, and high on/off drain current ratio at a growth temperature of 425 degrees C. The dense c-IGZO structure formed by spray pyrolysis contributes to the remarkable performance.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Li Zhu, Yongli He, Chunsheng Chen, Xiangjing Wang, Ying Zhu, Yixin Zhu, Huiwu Mao, Changjin Wan, Qing Wan
Summary: A high-performance transparent amorphous indium gallium zinc oxide thin-film transistor (a-IGZO TFT) gated by ALD-deposited HfAlOx was reported in this study. After an optimization process, the device showed significantly reduced trap density and good stability.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
