Crystal structure and electrical properties of {100}-oriented epitaxial BiCoO3-BiFeO3 films grown by metalorganic chemical vapor deposition

xBiCoO(3)-(1-x)BiFeO3 (x = 0-0.22) films of 400 nm thickness were grown on (100)(c) SrRUO3 parallel to (100) SrTiO3, Substrates by metalorganic chemical vapor deposition. The changes in the crystal structure and electrical properties of the films with X were investigated. The constituent phase changed front rhombohedral to a Mixture of rhombohedral and tetragonal, and to tetragonal with increasing x, by the x for this transition id different form that of 200-nm-thick films grown on (100) SrTiO3 substracts. The x of the morphotropic phase boundary that consisted of a mixture of tetragonal and rhombohedral symmetries depended on the film thickness. The remanant polarization continuously decreased with increasing x, in good agreement with the results obtained with the {100}-oriented Pb(Zr,Ti)O-3 epitaxial films owing to the decrease in the crystal anisotopy of the films.