Fabrication and Characterization of Poly(3-hexylthiophene)-Based Field-Effect Transistors with Silsesquioxane Gate Insulators

Published 2008 View Full Article

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Title
Fabrication and Characterization of Poly(3-hexylthiophene)-Based Field-Effect Transistors with Silsesquioxane Gate Insulators
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 47, Issue 4, Pages 3196-3199
Publisher
Japan Society of Applied Physics
Online
2008-04-25
DOI
10.1143/jjap.47.3196

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