Short-Channel AlGaN/GaN Field-Plated High-Electron-Mobility Transistors for X-Band High Power Operation

Published 2008 View Full Article

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Title
Short-Channel AlGaN/GaN Field-Plated High-Electron-Mobility Transistors for X-Band High Power Operation
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 47, Issue 3, Pages 1479-1483
Publisher
Japan Society of Applied Physics
Online
2008-03-16
DOI
10.1143/jjap.47.1479

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