Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 47, Issue 4, Pages 2910-2914Publisher
JAPAN SOCIETY APPLIED PHYSICS
DOI: 10.1143/JJAP.47.2910
Keywords
photoelastic effect; racetrack ring resonator; strain; silicon device; optical switch; optical interconnection; electrooptic effect
Categories
Ask authors/readers for more resources
The photoelastic effect of Si was measured in a real optical device, a racetrack ring resonator. The sample holder that can induce strain mechanically was fabricated and the strain dependence of resonance wavelength was investigated. The holder can induce a 10(-4) order strain and a 0.1 nm order shift of resonance wavelength induced by this strain was observed. By subtracting the contribution of change in the circumference of the racetrack ring resonator from the resonance wavelength shift, the photoelastic effect was estimated. As a result, the obtained photoelastic coefficient was consistent with that of bulk Si.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available