Article
Engineering, Electrical & Electronic
Weiwei Zhang, Kapil Debnath, Bigeng Chen, Ke Li, Shenghao Liu, Martin Ebert, Jamie Dean Reynolds, Ali Z. Khokhar, Callum Littlejohns, James Byers, Muhammad K. Husain, Frederic Y. Gardes, Shinichi Saito, David J. Thomson
Summary: This paper analyzed and optimized the structure of horizontal Silicon insulator Silicon capacitor (H-SISCAP) phase shifters, which can achieve high bandwidth modulators for optical transmitters with data rates up to 60 Gbit/s.
JOURNAL OF LIGHTWAVE TECHNOLOGY
(2021)
Article
Multidisciplinary Sciences
Rubab Amin, Rishi Maiti, Yaliang Gui, Can Suer, Mario Miscuglio, Elham Heidari, Jacob B. Khurgin, Ray T. Chen, Hamed Dalir, Volker J. Sorger
Summary: The research focuses on developing highly efficient and fast photonics devices on a silicon photonic platform using ITO thin films, successfully achieving a spectrally broadband, GHz-fast Mach-Zehnder interferometric modulator and enabling spectrally broadband operation across the entire telecommunication near infrared C-band. Such devices open up new possibilities for high-density photonic circuitry critical for high interconnect density of photonic neural networks or applications in GHz-fast optical phased-arrays.
SCIENTIFIC REPORTS
(2021)
Article
Engineering, Electrical & Electronic
F. E. Bergamaschi, T. A. Ribeiro, B. C. Paz, M. de Souza, S. Barraud, M. Casse, M. Vinet, O. Faynot, M. A. Pavanello
Summary: This work investigates the variation of carrier mobility in Omega-gate silicon-on-insulator (SOI) nanowire MOS transistors induced by substrate biasing. Experimental measurements and 3-D TCAD simulation are used for analysis. It is found that lower back bias levels result in mobility enhancement due to initial conduction through the Si-BOX interface. However, increasing back bias leads to worse scattering mechanisms and mobility degradation in the back channel, especially for devices with larger fin width. The use of back bias is more beneficial for mobility in short-channel devices.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Electrical & Electronic
Matthias L. Vermeer, Raymond J. E. Hueting, Luca Pirro, Jan Hoentschel, Jurriaan Schmitz
Summary: Quantification of interface traps in double-gate fully depleted silicon-on-insulator transistors is crucial for accurate device modeling and technology development. A new method combining the g(m)/I-D method and a revised form of the k-sweep method was developed in this study, resulting in a typical trap density of 2*10^(11)cm^(-2)eV^(-1). However, the allocation of traps to the front or back interface is challenging, with at least a 20% error reported.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Optics
Weiwei Zhang, Martin Ebert, Ke Li, Bigeng Chen, Xingzhao Yan, Han Du, Mehdi Banakar, Dehn T. Tran, Callum G. Littlejohns, Adam Scofield, Guomin Yu, Roshanak Shafiiha, Aaron Zilkie, Graham Reed, David J. Thomson
Summary: Researchers have proposed a mechanism to enhance the extinction ratio of a low-quality-factor, high-speed ring modulator by harnessing the plasma absorption induced in a silicon metal-oxide-semiconductor waveguide, paving a way to the evolution of optical interconnects to 100 Gbaud and beyond per wavelength.
Article
Multidisciplinary Sciences
David Glukhov, Zeev Zalevsky, Avi Karsenty
Summary: This article provides a thorough analysis of the functionality of a nanoscale silicon-based optoelectronic modulator, focusing on the competition between thermal and photonic processes and proposing a solution using picosecond pulsed laser to minimize energy loss in heat.
SCIENTIFIC REPORTS
(2022)
Article
Engineering, Electrical & Electronic
Tatsurou Hiraki, Takuma Aihara, Yoshiho Maeda, Takuro Fujii, Tai Tsuchizawa, Kiyoto Takahata, Takaaki Kakitsuka, Shinji Matsuo
Summary: Researchers have developed an InP-based electro-absorption modulator with a low-loss and large-absorption-length supermode waveguide. By utilizing the membrane lateral p-i-n diode structure, they successfully reduced the RC time constant of a lumped-electrode InP-based EAM, achieving a high EO bandwidth performance.
JOURNAL OF LIGHTWAVE TECHNOLOGY
(2021)
Article
Multidisciplinary Sciences
Forrest Valdez, Viphretuo Mere, Xiaoxi Wang, Nicholas Boynton, Thomas A. Friedmann, Shawn Arterburn, Christina Dallo, Andrew T. Pomerene, Andrew L. Starbuck, Douglas C. Trotter, Anthony L. Lentine, Shayan Mookherjea
Summary: We designed and fabricated a thin-film lithium niobate Mach-Zehnder modulator capable of handling high optical power and achieving high modulation efficiency by using hybrid optical modes and carefully tapering the underlying waveguide.
SCIENTIFIC REPORTS
(2022)
Article
Materials Science, Multidisciplinary
Hongyuan Cao, Mingfei Ding, Haitao Chen, Chaoyue Liu, Laiwen Yu, Mingyu Zhu, Weike Zhao, Jingshu Guo, Huan Li, Zejie Yu, Shiming Gao, Daoxin Dai
Summary: This article demonstrates the high-efficiency on-chip all-optical modulation based on ultra-thin silicon/graphene hybrid waveguides, achieving a modulation depth of over 2 dB. The proposed all-optical modulator has high modulation efficiency and the potential to operate at a wide bandwidth, making it suitable for on-chip ultrafast and energy-efficient all-optical information processing.
ADVANCED OPTICAL MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Ismael Charlet, Yohan Desieres, Delphine Marris-Morini, Frederic Boeuf
Summary: This paper presents a model for optimizing capacitive modulators using full-Si or with a thin layer of strained SiGe, along with an optimization algorithm to estimate the highest optimal modulation amplitude for different operating frequencies.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
(2021)
Article
Optics
Andrey A. Nikitin, Ilya A. Ryabcev, Aleksei A. Nikitin, Alexandr Kondrashov, Alexander A. Semenov, Dmitry A. Konkin, Andrey A. Kokolov, Feodor Sheyerman, Leonid Babak, Alexey B. Ustinov
Summary: The present work focuses on experimental investigations of a bistable silicon-on-insulator microring resonator. The resonator operates in a continuous-wave mode and demonstrates stable hysteresis response at the through and drop ports when the input power exceeds the threshold value. By flipping the optical input power, the output characteristics of the resonator can be conveniently switched between two steady states.
OPTICS COMMUNICATIONS
(2022)
Article
Physics, Applied
Tipat Piyapatarakul, Hanzhi Tang, Kasidit Toprasertpong, Shinichi Takagi, Mitsuru Takenaka
Summary: In this study, a III-V metal-oxide-semiconductor (MOS) optical modulator with a graphene gate electrode is proposed, and the modulation properties are analyzed. By using p-type doped graphene as a transparent gate electrode in an n-type InGaAsP waveguide, the electron-induced refractive index change can be fully utilized while reducing the hole-induced optical absorption observed in a III-V/Si hybrid MOS optical modulator. Numerical analysis shows that a phase modulation efficiency of 0.82 V·cm and an optical loss of 0.22 dB for pi phase shift can be achieved when the gate oxide thickness is 100 nm. Furthermore, the elimination of unnecessary parasitic capacitance caused by the graphene overlapping with the slab part of the waveguide, combined with the high electron mobility in InGaAsP, enables a modulation bandwidth of greater than 200 GHz for the device.
JAPANESE JOURNAL OF APPLIED PHYSICS
(2023)
Article
Engineering, Electrical & Electronic
Feng Gao, Wu Xie, James Y. S. Tan, Chewping Leong, Chao Li, Xianshu Luo, Guo-Qiang Lo
Summary: This article provides a detailed investigation and comparison of 14 different thermal phase shifter designs on the same fabrication platform, including dimensions, material, and heat dissipation approaches. The comparison indicates that both suspended heater and doped silicon design could significantly improve thermo-optic phase modulation efficiency. On the choice of waveguide material, the electrical power consumption of SiN waveguide is about eight times higher than that of Si waveguide. Furthermore, the characterization of thermal crosstalk and breakdown current of the thermo-optic phase shifters is also detailed. Such comprehensive investigation can serve as a useful design guideline for photonic integrated circuit (PIC) designers.
JOURNAL OF LIGHTWAVE TECHNOLOGY
(2023)
Article
Chemistry, Analytical
Andrei Enache, Florin Draghici, Florin Mitu, Razvan Pascu, Gheorghe Pristavu, Mihaela Pantazica, Gheorghe Brezeanu
Summary: This paper presents an innovative readout circuit for SiC-MOS capacitor sensors using a phase locked loop (PLL) architecture. The circuit accurately converts the sensor's small-signal capacitance affected by hydrogen into a proportional output voltage. Validation through simulations and experiments demonstrates the correct operation of the proposed readout circuit, which successfully measures hydrogen concentrations up to 1600 ppm with voltage variations similar to experimental C-V curves.
Article
Engineering, Electrical & Electronic
David Coenen, Herman Oprins, Mathias Berciano, Grigorij Muliuk, Peter De Heyn, Joris Van Campenhout, Ingrid De Wolf
Summary: In this study, a novel methodology for coupled thermo-optical modeling of an electro-absorption modulator (EAM) is proposed. Through a combination of optical FDTD simulation and thermal finite element simulation, the thermal instability of the device characteristic is revealed, and a self-heating mitigation strategy is proposed.
JOURNAL OF LIGHTWAVE TECHNOLOGY
(2023)
