4.3 Article Proceedings Paper

High remanent magnetization of L10-ordered FePt thin film on MgO/(001) GaAs

Journal

JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 47, Issue 4, Pages 3269-3271

Publisher

JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.47.3269

Keywords

L1(0)-ordered FePt; GaAs; perpendicular magnetic anisotropy

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We investigated the optimized condition of the high remanent magnetization for L1(0)-ordered FePt on MgO/(001) i-GaAs substrate. Perpendicularly magnetized FePt films with different thicknesses of 5 and 10 nm were prepared at a substrate temperature T-s = 300 degrees C by magnetron sputtering. The ratio of remanent magnetization to saturation magnetization for the 5-nm-thick FePt layer was increased to 0.93 by post-annealing at T-a = 350 degrees C for 60 min, whereas that of the 10-nm-thick FePt layer was increased only to 0.3. The uniaxial magnetic anisotropy constant and the degree of long-range order for the 5-nm-thick FePt were K-u = 1.0 +/- 0.1 x 1(0)7 erg/cm(3) and S = 0.75 +/- 0.15, respectively, which are almost comparable to those of FePt on a (001) MgO substrate.

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