Article
Chemistry, Multidisciplinary
Yang Chen, Donglin Lu, Lingan Kong, Quanyang Tao, Likuan Ma, Liting Liu, Zheyi Lu, Zhiwei Li, Ruixia Wu, Xidong Duan, Lei Liao, Yuan Liu
Summary: Strain engineering is a promising method to enhance the carrier mobility of 2D semiconductors. However, current straining approaches on flexible or rough substrates may introduce other factors that impact carrier mobility. This study presents a strain engineering approach to fabricate highly strained MoS2 transistors on a flat substrate, without any interference from the dielectric environment or roughness-induced scattering effects. The results demonstrate enhanced electron mobility in MoS2 transistors through tension strain and decreased mobility through compression strain.
Article
Chemistry, Multidisciplinary
Arijit Kayal, Sraboni Dey, G. Harikrishnan, Renjith Nadarajan, Shashwata Chattopadhyay, Joy Mitra
Summary: The extraordinary mechanical properties of two-dimensional transition-metal dichalcogenides make them ideal candidates for investigating strain-induced control of various physical properties. By exploring the role of nonuniform strain on semiconducting, chemical vapor deposited monolayer MoS2 on nanostructured substrates, this study investigates the modulation of optical, electronic, and transport properties. The findings demonstrate the accumulation of electron density at strained regions, leading to a significant increase in field effect mobility in strained samples. Furthermore, the study shows that the pattern-induced strain can be easily controlled by changing the periodicity of the nanostructures, providing a robust yet useful macroscopic control on strain and mobility in these systems.
Article
Engineering, Electrical & Electronic
Yen Chuang, Chia-You Liu, Guang-Li Luo, Jiun-Yun Li
Summary: This study demonstrates a record high electron mobility in a tensile-strained Ge0.96Sn0.04 nMOSFET, achieved through high-quality GeSn films and different strain conditions. The use of a mesa FET structure effectively reduces OFF leakage while boosting the I-ON/I-OFF ratio significantly compared to conventional planar devices. As the GeSn film becomes more tensile strained, channel mobility is enhanced, potentially due to a higher carrier population in the Gamma valley.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Nanoscience & Nanotechnology
Jianfeng Mao, Zehan Wu, Feng Guo, Jianhua Hao
Summary: This study presents a new strategy of constructing patterned nanostructures compatible with the conventional silicon substrate to demonstrate a high-performance MoS2 photodetector. Manipulating strain distribution engineered by the substrate at the nanoscale, the strained MoS2 photodetector exhibits a much enhanced performance.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Chemistry, Multidisciplinary
Nasrollah Rezaei-Ghaleh, Jaime Agudo-Canalejo, Christian Griesinger, Ramin Golestanian
Summary: The researchers investigated the molecular diffusivity of reactants, catalyst, and product in a copper-catalyzed click reaction. They developed new NMR diffusion methods and found that while the reactants showed decreased diffusivity over time, the product showed increased diffusivity and the catalyst showed slight diffusion enhancement. This suggests the presence of a relatively large intermediate species with lower diffusivity than the reactants and product.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
(2022)
Article
Engineering, Electrical & Electronic
Chia-Tsong Chen, Kei Sumita, Kasidit Toprasertpong, Mitsuru Takenaka, Shinichi Takagi
Summary: Experimental investigation shows that the electrical properties of Ge-on-insulator pMOSFFETs are significantly improved as the strain in the channel approaches uniaxial strain. The maximum effective hole mobility is enhanced when quasi-uniaxial strain is achieved, leading to improved device performance.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Multidisciplinary Sciences
Jeffrey Schuster, Johannes Aberl, Lada Vukusic, Lukas Spindlberger, Heiko Groiss, Thomas Fromherz, Moritz Brehm, Friedrich Schaeffler
Summary: By strain engineering in ordered arrays of vertically close-stacked SiGe quantum dot pairs in the Si/SiGe heterosystem, efficient light emission has been achieved with enhanced wave function overlap. Additionally, the different functions of the two quantum dots were distinguished, leading to improved performance and suppression of thermal quenching and detrimental light emission in the double-QD configuration.
SCIENTIFIC REPORTS
(2021)
Article
Materials Science, Multidisciplinary
Jie Yan, Dan Cao, Xue Yang, Jianfeng Wang, Zhouting Jiang, Zhiwei Jiao, Haibo Shu
Summary: This study investigates the response of the structural stability, electronic structures, and optical properties of antimonene/germanane van der Waals heterostructure to in-plane strain using first-principles calculations. The results show that the band gap, band alignment, carrier mobility, and optical absorption coefficient of the heterostructure can be tuned by loading in-plane strain, leading to multiple indirect-direct-indirect band gap transitions and the alignment of band edge from type-I to type-II. Furthermore, the heterostructure exhibits increased hole mobility and ultra-high electron mobility under the tensile strain of 4%.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
(2022)
Article
Engineering, Electrical & Electronic
Karthickraj Muthuramalingam, Wei-Chih Wang
Summary: This study presents a non-destructive approach using terahertz time-domain spectroscopy (THz-TDS) to estimate the electrical properties of semi-insulating compound semiconductors. The study successfully measures the resistivity and carrier concentration of semi-insulating Silicon Carbide (SiC) and Indium Phosphide (InP) wafers using THz-TDS in transmission mode. The simplified Drude model and the Nelder-Mead algorithm are employed to estimate the electrical properties, and the results are in accordance with the manufacturer specifications. The feasibility of non-destructive mapping of the electrical properties is demonstrated, offering a promising tomographic inspection approach for online monitoring.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Physics, Applied
Shiqi Liu, Qiuhui Li, Chen Yang, Jie Yang, Lin Xu, Linqiang Xu, Jiachen Ma, Ying Li, Shibo Fang, Baochun Wu, Jichao Dong, Jinbo Yang, Jing Lu
Summary: This paper investigates the performance limit of gate-all-around (GAA) Si nanowire field-effect transistors (NWFETs) with a diameter of 1 nm through ab initio quantum transport simulations. The results show that the electrical conduction is concentrated in the core of the ultranarrow wire channel. The GAA Si NWFETs exhibit advantages in terms of on-state current and subthreshold swing compared to similar-sized trigate Si nanowire FinFETs. Strain engineering can further enhance the performance of the devices.
PHYSICAL REVIEW APPLIED
(2022)
Article
Multidisciplinary Sciences
Mohammad Ali Mohebpour, Shobair Mohammadi Mozvashi, Sahar Izadi Vishkayi, Meysam Bagheri Tagani
Summary: The study shows that X2YH2 monolayers have very low lattice thermal conductivities at room temperature, with Ge2PH2 and Si2SbH2 having high mobilities, and Si2BiH2 showing the highest room-temperature figure of merit in n-type doping.
SCIENTIFIC REPORTS
(2021)
Article
Materials Science, Multidisciplinary
Gerard Colston, Oliver Newell, Stephen D. Rhead, Vishal A. Shah, Maksym Myronov
Summary: The alloy silicon carbon (Si1-yCy) has various strain engineering applications, and increasing the strain in the alloy can lead to benefits in device applications. Micro-X-ray diffraction techniques were used to investigate the strain state and crystalline tilt of suspended Si1-yCy epilayers, revealing an increase in in-plane tensile strain of the alloy. This strain increase was found to be caused by slight tilts at the edges of the membranes, indicating potential for external strain enhancement.
MATERIALS & DESIGN
(2021)
Article
Chemistry, Multidisciplinary
Isha M. Datye, Alwin Daus, Ryan W. Grady, Kevin Brenner, Sam Vaziri, Eric Pop
Summary: Strain can significantly enhance the electron mobility of two-dimensional semiconductors, which is crucial for applications such as flexible strain sensors.
Article
Chemistry, Physical
Guixian Ge, Yanwen Zhang, Hongxia Yan, Jueming Yang, Long Zhou, Xianjun Sui
Summary: This study systematically investigated the electronic property and carrier mobility of monolayer GeTe under uniaxial strain using first-principles calculations. The results showed high carrier mobility with potential applications in electronics, optoelectronics, and nanoscale mechanical sensors.
APPLIED SURFACE SCIENCE
(2021)
Article
Materials Science, Multidisciplinary
L. A. Terrazos, E. Marcellina, Zhanning Wang, S. N. Coppersmith, Mark Friesen, A. R. Hamilton, Xuedong Hu, Belita Koiller, A. L. Saraiva, Dimitrie Culcer, Rodrigo B. Capaz
Summary: Holes in a SixGe1-x/Ge/SixGe1-x quantum well exhibit advantageous properties in a perpendicular magnetic field as qubits, including large intrinsic splitting, light effective mass, and larger dot sizes. Compared to electrons, hole qubits are not affected by nearby quantum levels and can potentially implement electric-dipole spin resonance.
