Journal
INTERNATIONAL JOURNAL OF THERMOPHYSICS
Volume 36, Issue 5-6, Pages 1217-1225Publisher
SPRINGER/PLENUM PUBLISHERS
DOI: 10.1007/s10765-014-1681-6
Keywords
Defect isolation; Temperature mapping; Thermoreflectance microscopy
Funding
- Korea Basic Science Institute [D34500]
- Korea Evaluation Institute of Industrial Technology (KEIT) [S2060032] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Council of Science & Technology (NST), Republic of Korea [D34500] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Thermal analysis of small defects becomes essential for understanding the influence of hotspots, which affect the device performance, such as the operating speed and reliability. In this paper, we demonstrate a CCD-based thermoreflectance microscopy (TRM) system as a noncontact thermal analysis technique especially for submicron defects on microelectronic devices. By employing a lock-in detection technique and temperature calibration process, the surface temperature distribution of a polysilicon microresistor and submicron defects that are not distinguishable in conventional optical microscope images can be quantitatively measured with high thermal (up to 13 mK) and spatial (670 nm) resolution. In addition, the accuracy of quantitative temperature measurement and small defect isolation by the TRM system is compared with that obtained from an infrared thermography (IRT) system.
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