OPTICAL AND ELECTRICAL PROPERTIES OF SnO2 THIN FILM PREPARED USING RTO METHOD

Transparent and conducting SnO2 thin film has been produced on quartz substrate using rapid thermal oxidation of pure Sn in air at different oxidation temperature and oxidation time. The transmittance T in the visible and NIR was investigated, the allowed direct energy gap was determined to be 3.18 eV at optimum condition of 600 degrees and 90 s. The dependence of the resistivity on the film thickness and oxidation time has been studied. The optimum thickness of high transmittance and lowest resistivity is about 150 nm for SnO2 were rho = 2 x 10(-2) Omega cm and T = 88%.