Journal
MICROELECTRONIC ENGINEERING
Volume 141, Issue -, Pages 203-206Publisher
ELSEVIER
DOI: 10.1016/j.mee.2015.03.049
Keywords
Graphene; Mask less laser process; Ultraviolet laser
Categories
Funding
- Japan Society for Promotion of Science
- KAKENHI [25420287]
- Grants-in-Aid for Scientific Research [25420287, 24540324] Funding Source: KAKEN
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Graphene on a SiO2/Si substrate was removed by ultraviolet pulsed laser irradiation. Threshold laser power density to remove graphene depended on the graphene thickness. The mechanism is discussed using kinetic energy of thermal expansion of the substrate surface. Utilizing the thickness dependence, thickness (or layer-number) selective process for graphene is demonstrated. Maskless patterning of graphene using laser irradiation in the air is also demonstrated. (C) 2015 Elsevier B.V. All rights reserved.
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