Resistive switching in CeO2/La0.8Sr0.2MnO3 bilayer for non-volatile memory applications

Published 2015 View Full Article

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Title
Resistive switching in CeO2/La0.8Sr0.2MnO3 bilayer for non-volatile memory applications
Authors
Keywords
Resistive switching, Non-volatile memory, RRAM, LSMO, CeO, 2−,
Journal
MICROELECTRONIC ENGINEERING
Volume 147, Issue -, Pages 37-40
Publisher
Elsevier BV
Online
2015-04-14
DOI
10.1016/j.mee.2015.04.042

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