The physical and electrical characterizations of Cr-doped BiFeO3 ferroelectric thin films for nonvolatile memory applications

Published 2015 View Full Article

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Title
The physical and electrical characterizations of Cr-doped BiFeO3 ferroelectric thin films for nonvolatile memory applications
Authors
Keywords
Mutiferroic BiFeO, 3, Metal-multiferroic-insulator-semiconductor (MFIS) structure, Memory window, Leakage current
Journal
MICROELECTRONIC ENGINEERING
Volume 138, Issue -, Pages 86-90
Publisher
Elsevier BV
Online
2015-02-28
DOI
10.1016/j.mee.2015.02.027

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