Impact of oxygen composition of ZnO metal-oxide on unipolar resistive switching characteristics of Al/ZnO/Al resistive RAM (RRAM)

Published 2015 View Full Article

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Title
Impact of oxygen composition of ZnO metal-oxide on unipolar resistive switching characteristics of Al/ZnO/Al resistive RAM (RRAM)
Authors
Keywords
ZnO, Resistive RAM, RRAM, Oxygen gas flow ratio, Oxygen composition, Switching mechanism
Journal
MICROELECTRONIC ENGINEERING
Volume 136, Issue -, Pages 15-21
Publisher
Elsevier BV
Online
2015-03-31
DOI
10.1016/j.mee.2015.03.027

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