Current–voltage characteristics of Schottky diode simulated using semiconductor device equations

Analysis of the forward and reverse bias I-V characteristics on Au/PVA:Zn/n-Si Schottky barrier diodes in the wide temperature range

(2011) İlke Taşçıoğlu et al.   JOURNAL OF APPLIED PHYSICS

A Generalized Drift-Diffusion Model for Rectifying Schottky Contact Simulation

(2010) Fabio Lorenzo Traversa et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

The analysis of the series resistance and interface states of MIS Schottky diodes at high temperatures using I–V characteristics

(2009) A. Tataroğlu et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Temperature dependence of current–voltage characteristics of Al/p-Si (100) Schottky barrier diodes

(2009) Ö. Faruk Yüksel   PHYSICA B-CONDENSED MATTER

Correlation between barrier heights and ideality factors of H-terminated Sn/p-Si(100) Schottky barrier diodes

(2008) B. Boyarbay et al.   MICROELECTRONIC ENGINEERING

Gaussian distribution of inhomogeneous barrier height in tungsten/4H-SiC (000-1) Schottky diodes

(2008) S. Toumi et al.   MICROELECTRONIC ENGINEERING

Temperature-dependent behavior of Ti/p-InP/ZnAu Schottky barrier diodes

(2008) Sezai Asubay et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

The distribution of the barrier height in Al–TiW–Pd2Si/n-Si Schottky diodes fromI–V–Tmeasurements

(2008) Ilbilge Dökme et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Temperature dependence of current–voltage characteristics of an In/p-GaSe:Gd/Au–Sb Schottky barrier diode

(2008) Songül Duman   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

The influence of series resistance and interface states on intersecting behavior ofI–Vcharacteristics of Al/TiO2/p-Si (MIS) structures at low temperatures

(2008) O Pakma et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

On-state behaviour of diamond Schottky diodes

(2007) M. Brezeanu et al.   DIAMOND AND RELATED MATERIALS

Temperature dependence of current–voltage characteristics of Sn/p-Si Schottky contacts

(2007) M.E. Aydın et al.   PHYSICA B-CONDENSED MATTER

Determination of lateral barrier height of identically prepared Ni/n-type Si Schottky barrier diodes by electrodeposition

(2007) G. Güler et al.   PHYSICA B-CONDENSED MATTER