Diffusion mechanisms of vacancy and doped Si in Al3Ti from first-principles calculations

Published 2011 View Full Article

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Title
Diffusion mechanisms of vacancy and doped Si in Al3Ti from first-principles calculations
Authors
Keywords
-
Journal
INTERMETALLICS
Volume 19, Issue 7, Pages 1036-1040
Publisher
Elsevier BV
Online
2011-04-16
DOI
10.1016/j.intermet.2011.03.012

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