Microwave Dielectric Properties of Mn-doped (Ba,Sr)TiO3//Ba(Zr,Ti)O3 Multilayered Thin Films: Optimization of Designed Structure

Environment-friendly Ferroelectric Mn:BST//Mn:BZT multilayer with additional 2% Mn doping were epitaxially fabricated on (001) MgO substrates by pulsed laser deposition with same thickness but different stacking periodic numbers or each layer thickness. Microstructure studies by X-ray diffraction and transmission electron microscopy indicate that the multilayer is c-axis oriented with good epitaxial nature. The microwave (approximate to 18GHz) dielectric property measurements show that the dielectric loss tangent rapidly decreases with the increase of each layer thickness. The loss tangent can be lowered down to approximate to 0.043 at approximate to 18GHz, which suggests that the Mn:BST//Mn:BZT multilayer system has great potential for the development of room temperature microwave elements and related applications.