Journal
INTEGRATED FERROELECTRICS
Volume 100, Issue -, Pages 16-25Publisher
TAYLOR & FRANCIS LTD
DOI: 10.1080/10584580802540173
Keywords
amorphous and crystallized PZT films; PZT island; sputtering; FIB Ga; piezoresponse force microscopy (PFM)
Funding
- France ministry of research and new technology
- Universite de Valenciennes et du Hainaut Cambresis
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Pb(Zrx,Ti1 - x)O3 (PZT) microscale island (1 m 100 nm) was fabricated by Focused Ion Beam (FIB) before and after its crystallization. In the first case the FIB etching is realized on amorphous films and a post annealing treatment, at the crystallization temperature of the PZT films, is necessary to cristallize the film in the perovskite phase. In the second case the etching are made on crystallized films. Local electrical properties were evaluated by piezoresponse force microscopy (PFM) technique and the degradations induce in the films are studies by Raman spectroscopy. Compared to the PZT island fabricated after crystallization, the result shows that there is noticeable enhancement in nanoscale electrical properties of PZT island fabricated before crystallization, especially when the island size decreases.
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