Article
Automation & Control Systems
Yu Ren, Fan Zhang, Xu Yang, Xiaoqing Han, Wenjie Chen
Summary: This article proposes a master-slave concept based modular circuit breaker to simplify the gate driver topology of DC circuit breakers, and achieve gate control and voltage equalization. The proposed topology has high flexibility and low cost, and its effectiveness has been demonstrated through simulation and experimental tests.
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
(2022)
Article
Engineering, Electrical & Electronic
Gard Lyng Rodal, Dimosthenis Peftitsis
Summary: This article presents a novel current-source gate driver for SiC MOSFETS with adaptive functionalities. The proposed driver aims to decouple and improve controllability of di/dt, dv/dt, as well as decrease turn-ON and turn-OFF delay times compared to conventional gate drivers. The performance of the proposed driver is validated experimentally, showing significant reduction in delay times and improved controllability.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2023)
Article
Engineering, Electrical & Electronic
Yang Wen, Yuan Yang, Yong Gao
Summary: High-power SiC MOSFETs are used in power electronics for their high switching speed and low losses. An active gate driver (AGD) is presented to balance currents in parallel-connected SiC MOSFET modules, using dynamic gate drive voltage adjustment to synchronize current edges and slopes. AGDs measure and control current individually, without the need for extra supervising control circuits.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2021)
Article
Computer Science, Information Systems
Donglin Xu, Ming Yang, Kaiyuan Hu, Dianguo Xu
Summary: This paper proposes a negative voltage transistor-based assist gate driver (NVTAGD) to suppress the voltage spike caused by crosstalk in a phase-leg configuration of silicon carbide (SiC) MOSFETs. The NVTAGD establishes a negative gate-source voltage level using a simple circuit and actively suppresses the positive and negative voltage spikes using auxiliary transistors, capacitors, and diodes. Experimental results demonstrate that the proposed method effectively reduces crosstalk voltage and improves device reliability.
Article
Automation & Control Systems
Xiang Li, Daohui Li, Guiqin Chang, Wei Gong, Matthew Packwood, Daniel Pottage, Yangang Wang, Haihui Luo, Guoyou Liu
Summary: This article reports on the development of a 3.3-kV/450-A half-bridge insulated-gate bipolar transistor power module that combines silicon and silicon carbide technologies. The module aims to miniaturize the traction inverters used in Chinese high-speed railway rolling stock. By reducing power dissipation, the module can effectively downsize key components and offers advantages in loss reduction and potential system miniaturization.
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
(2022)
Article
Engineering, Electrical & Electronic
Jian Liu, Lakshmi Ravi, Dong Dong, Rolando Burgos
Summary: This letter introduces a novel single passive gate driver solution for controlling series-connected power semiconductor devices in DCCB applications, utilizing transient suppression devices to achieve natural voltage balancing, provide a discharge path for gate capacitors, and mitigate gate voltage oscillation. Simulation and experimental results confirm the effectiveness of the proposed method, which is simple, cost-effective, and compact compared to conventional methods.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2021)
Article
Automation & Control Systems
Chengzi Yang, Yunqing Pei, Laili Wang, Longyang Yu, Fan Zhang, Huaqing Li, Jilong Liu, Mengyu Zhu
Summary: Wide bandgap semiconductors such as silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) offer good switching speed and withstand voltage, leading to new requirements for high bandwidth voltage measurement. The proposed voltage sensing circuit and proactive parameter design compensation network aim to meet these requirements by utilizing the characteristics of resistors and parasitic capacitance. By combining these technologies, the voltage probes can achieve higher withstand voltage ratings and better performance in measuring high-speed switching voltage.
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
(2021)
Article
Engineering, Electrical & Electronic
Mathis Picot-Digoix, Frederic Richardeau, Jean-Marc Blaquiere, Sebastien Vinnac, Stephane Azzopardi, Thanh-Long Le
Summary: The proposed dual-port gate driver architecture uses quasi-flying gate concept to protect SiC power MOSFETs from short-circuit events. Hard switching faults extract charges through leakage current, while faults under load lead to charge injection into the gate. These phenomena cause gate-source voltage perturbations, which are amplified by the gate resistor. A small gate resistance is used for high switching dynamics, while a larger one is switched on during pulsewidth modulation to detect faults. Experimental results show promising detection and protection in less than 300 ns.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2023)
Article
Engineering, Electrical & Electronic
Pengfei Xiang, Ruixiang Hao, Jingxian Cai, Xiaojie You
Summary: In this article, a novel closed-loop active gate driver based on the PCB Rogowski Coil is proposed to optimize the switching performance of SiC MOSFETs. The experimental results show that the proposed driver can reduce overshoot, suppress oscillation, and optimize the compromise between switching loss and switching time.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2023)
Article
Engineering, Electrical & Electronic
Xiaofeng Ding, Xinrong Song, Zhihui Zhao, Zhenyu Shan, Binbin Wang
Summary: This article proposes an active junction temperature control method for SiC MOSFETs based on a resistor-less gate driver. The experimental results show that the proposed method can reduce junction temperature fluctuation, prolong the lifetime of SiC MOSFETs, and decrease energy loss.
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS
(2022)
Article
Engineering, Electrical & Electronic
Ye Zhou, Liang Xian, Xu Wang
Summary: This article introduces a novel active gate drive circuit to solve the imbalanced voltage problem of series-connected SiC MOSFETs. It proposes two sampling and voltage balancing control circuits based on different processors and verifies their performance. The article also provides an analysis and assessment of switching losses and costs.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2022)
Article
Automation & Control Systems
Sadegh Mohsenzade, Mostafa Zarghani, Shahriyar Kaboli
Summary: This article proposes a high-voltage fault current limiter (HVFCL) for high-voltage dc power supplies (HVdcPSs) which limits the current of the power supply automatically in the short-circuit fault (SCF). The proposed HVFCL achieves balanced voltage sharing and a very low value of the short-circuit current near to the load nominal current for the series-connected IGBTs during the SCF, resulting in a longer maximum permissible short-circuit time. This is achieved through a control strategy that puts the series-connected IGBTs in a specific operating point in the active region during the SCF.
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
(2021)
Article
Engineering, Electrical & Electronic
Di Zhang, Xu She
Summary: This letter introduces the patented hybrid multilevel converters with silicon (Si) and silicon carbide (SiC) devices (US10191531B2) and its impact to industry and academia. The patent invented a novel concept by combining high frequency switched SiC devices and fundamental frequency switched Si devices, therefore, balances the cost and performance. The patent has been implemented in the world's first megawatt-class and multikilovolt hybrid electric aircraft system. Additionally, there are many worldwide following up works in extended topologies, control, and modulation methods.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2023)
Article
Engineering, Electrical & Electronic
Hyun-Bin Jo, Seung-Ho Song, Seung-Hee Lee, Hong-Je Ryoo
Summary: Solid-state pulsed-power modulators can effectively generate high repetition rate pulses, suitable for applications where process rate depends on repetition rate. By utilizing active pull-down circuits and designed MOSFET gate drivers, the modulator achieves fast rise and fall times, as well as minimal pulsewidth.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2021)
Article
Chemistry, Physical
Yexin Chen, Qinghai Zhu, Xiaodong Zhu, Yijun Sun, Zhiyuan Cheng, Jing Xu, Mingsheng Xu
Summary: In this study, a gate-tunable, high-performance, self-driving, and wide detection range phototransistor based on a 2D PtSe2 on silicon-on-insulator (SOI) was proposed. The phototransistor showed fast response time and excellent photodetection performance over a broad spectral range from ultraviolet to near-infrared.
Article
Green & Sustainable Science & Technology
Horacio Silva-Saravia, Hector Pulgar-Painemal, Leon M. Tolbert, David A. Schoenwald, Wenyun Ju
Summary: This paper presents a new control method for large-scale solar PV plants to mitigate electromechanical oscillations by utilizing active power modulation without the need for curtailment. The proposed step-down modulation (SDM) control method demonstrates improved damping capability compared to curtailment-based PV damping control in a two-area system test case with six large-scale PV plants on the 179-bus WECC system.
IEEE TRANSACTIONS ON SUSTAINABLE ENERGY
(2021)
Article
Engineering, Electrical & Electronic
Shiqi Ji, Xingxuan Huang, James Palmer, Fred Wang, Leon M. Tolbert
Summary: The study highlights the importance of considering submodule voltage sensor noise in MMC modeling and proposes a method to improve MMC models by introducing SVSN. Experimental results demonstrate that the proposed model performs well in capturing the impact of SVSN.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2021)
Article
Engineering, Electrical & Electronic
Sheng Zheng, Jingxin Wang, Fred Wang, Leon M. Tolbert
Summary: This paper proposes a novel CVSR based on a DCC for power flow management in transmission systems. By comprehensively analyzing the three-dimensional electromagnetic interaction, a high-fidelity reluctance model of the CVSR and a reliable high-power DCC converter are designed. Experimental results validate the effectiveness of the proposed system design and modeling methodology.
IEEE TRANSACTIONS ON POWER DELIVERY
(2022)
Article
Engineering, Electrical & Electronic
Zhou Dong, Ren Ren, Wen Zhang, Fei Fred Wang, Leon M. Tolbert
Summary: The study reveals that switching trajectory significantly influences the parallel stability of MOSFETs, and nonlinear device parameters also have an impact on stability. To improve stability in solid-state circuit breaker applications, a method to manipulate the switching trajectory to avoid unstable regions is proposed.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2021)
Proceedings Paper
Engineering, Electrical & Electronic
Yunting Liu, Fang Z. Peng, Leon M. Tolbert
2020 IEEE 9TH INTERNATIONAL POWER ELECTRONICS AND MOTION CONTROL CONFERENCE (IPEMC2020-ECCE ASIA)
(2020)
Proceedings Paper
Energy & Fuels
Yunting Liu, Paychuda Kritprajun, Leon M. Tolbert, Jiaojiao Dong, Lin Zhu, Joshua C. Hambrick, Kevin Schneider, Bishnu P. Bhattarai
2020 IEEE POWER & ENERGY SOCIETY GENERAL MEETING (PESGM)
(2020)
Proceedings Paper
Energy & Fuels
Shuyao Wang, Haiguo Li, Yiwei Ma, Fred Wang, Leon M. Tolbert
2020 IEEE POWER & ENERGY SOCIETY GENERAL MEETING (PESGM)
(2020)
Proceedings Paper
Energy & Fuels
Xin Xu, Yunting Liu, Kai Sun, Leon M. Tolbert, Suman Debnath
2020 IEEE POWER & ENERGY SOCIETY GENERAL MEETING (PESGM)
(2020)
Proceedings Paper
Energy & Fuels
Jingjing Sun, Jie Li, Daniel J. Costinett, Leon M. Tolbert
2020 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE)
(2020)
Proceedings Paper
Energy & Fuels
Shuyao Wang, Yiwei Ma, Taylor Short, Leon M. Tolbert, Fred Wang
2020 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE)
(2020)
Proceedings Paper
Energy & Fuels
Ruirui Chen, Fred Wang, Leon M. Tolbert, Daniel J. Costinett, Benjamin B. Choi
2020 THIRTY-FIFTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2020)
(2020)
Proceedings Paper
Energy & Fuels
Shuyao Wang, Haiguo Li, Jingxin Wang, Yiwei Ma, Fred Wang, Leon M. Tolbert
2020 THIRTY-FIFTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2020)
(2020)
Proceedings Paper
Energy & Fuels
James Palmer, Shiqi Ji, Xingxuan Huang, Li Zhang, William Giewont, Fei (Fred) Wang, Leon M. Tolbert
2020 THIRTY-FIFTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2020)
(2020)
Proceedings Paper
Energy & Fuels
Dingrui Li, Shiqi Ji, Xingxuan Huang, James Palmer, Fred Wang, Leon M. Tolbert
2020 THIRTY-FIFTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2020)
(2020)
Proceedings Paper
Energy & Fuels
Shiqi Ji, James Palmer, Xingxuan Huang, Dingrui Li, Bill Giewont, Leon M. Tolbert, Fred Wang
2020 THIRTY-FIFTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2020)
(2020)