AlxGa1−xN/GaN/AlN heterostructures grown on Si(111) substrates by MBE for MSM UV photodetector applications

Published 2015 View Full Article

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Title
AlxGa1−xN/GaN/AlN heterostructures grown on Si(111) substrates by MBE for MSM UV photodetector applications
Authors
Keywords
Al, , Ga, , N, MBE, XRD, III-Nitride, Silicon
Journal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 34, Issue -, Pages 214-223
Publisher
Elsevier BV
Online
2015-03-06
DOI
10.1016/j.mssp.2015.02.048

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