Device behavior of an In/p-Ag(Ga,In)Te2/n-Si/Ag heterojunction diode

Title
Device behavior of an In/p-Ag(Ga,In)Te2/n-Si/Ag heterojunction diode
Authors
Keywords
Thin films, Heterojunctions, Deposition, Electrical transport, Thermal analysis
Journal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 34, Issue -, Pages 138-145
Publisher
Elsevier BV
Online
2015-03-04
DOI
10.1016/j.mssp.2015.02.043

Ask authors/readers for more resources

Reprint

Contact the author

Publish scientific posters with Peeref

Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.

Learn More

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search