Improved p–n heterojunction device performance induced by irradiation in amorphous boron carbide films

Published 2015 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Improved p–n heterojunction device performance induced by irradiation in amorphous boron carbide films
Authors
Keywords
Semiconducting boron carbides, Hydrogenated boron carbides, p–n heterojunction, Radiation hard, Alpha particle radiation, Neutron detector
Journal
Materials Science and Engineering B-Advanced Functional Solid-State Materials
Volume 202, Issue -, Pages 25-30
Publisher
Elsevier BV
Online
2015-09-26
DOI
10.1016/j.mseb.2015.09.002

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.