4.6 Article

Directly High-Voltage Measuring System Based on Pockels Effect

Journal

IEEE TRANSACTIONS ON POWER DELIVERY
Volume 28, Issue 3, Pages 1306-1313

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPWRD.2013.2250315

Keywords

Bismuth germanium oxide (BGO); divider; Faraday effect; Pockels effect; voltage sensor

Funding

  1. Grants-in-Aid for Scientific Research [22686030, 22246035, 25289072] Funding Source: KAKEN

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To measure high voltage up to +/- 450 kV in the dc to GHz range, a new optical high-voltage measuring system using a Pockels crystal in a longitudinal modulation arrangement is developed. The maximum measurable voltage for conventional Pockels sensors has been limited by the half-wavelength voltage V-pi. In the new system, a two-wavelength dual laser system is introduced to expand measurable voltage up to the least common multiple of V-pi for each light. The measured results for dc, ac, lightning impulse, and step voltages by the system are presented and compared with the predicted values.

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