4.5 Article Proceedings Paper

Radiation Studies of Spin-Transfer Torque Materials and Devices

Journal

IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Volume 59, Issue 6, Pages 3027-3033

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2012.2223487

Keywords

Magnetic tunnel junction; nonvolatile memory; spin-transfer torque

Funding

  1. Defense Threat Reduction Agency under MIPR [11-2870M]
  2. Microsystems Technology Office, Defense Advanced Research Projects Agency

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Spin-transfer torque film stacks and devices having in-plane magnetization were irradiated using a cobalt-60 gamma source. Samples were also exposed to 2 MeV and 220 MeV protons. Measurements of magnetization vs. field, ferromagnetic resonance, and tunnel magnetoresistance were performed on the film stacks before and after exposure to these sources and no changes were observed in the associated material properties. Spin-transfer torque devices were exposed to the same sources and show no changes in bit-state or write performance.

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