Article
Engineering, Electrical & Electronic
Animesh Datta, Uttam Singisetti
Summary: In this article, we investigate the Single-Event Effects (SEEs) that lead to Single-Event Burnout (SEB) in fi-Ga2O3 MOSFETs. Through simulations, we find that high electric fields in the channel play a critical role in SEB occurrence. Radiation-hardened designs, such as rounded gates and high-permittivity (k) dielectrics, are proposed to reduce the electric field and increase the SEB threshold. By using HfO2-SiO2 or BaTiO3-SiO2 dielectric combinations, higher SEB thresholds can be achieved. The energy dissipation during ion strike events is also calculated, showing lower values compared to SiC MOSFETs.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Chemistry, Analytical
Chen Wang, Yi Liu, Changqing Xu, Xinfang Liao, Dongdong Chen, Zhenyu Wu
Summary: Power MOSFETs are susceptible to single-event burnout (SEB) in space irradiation environments, and their temperature dependence should be investigated. Simulation results show that Si power MOSFETs are more resistant to SEB at higher temperatures with lower LET (10 MeV.cm(2)/mg). However, when the LET value exceeds 40 MeV.cm(2)/mg, the parasitic BJT plays a primary role in the SEB failure mechanism with a different temperature dependence.
Article
Chemistry, Analytical
Fabio Principato, Giuseppe Allegra, Corrado Cappello, Olivier Crepel, Nicola Nicosia, Salvatore D'Arrigo, Vincenzo Cantarella, Alessandro Di Mauro, Leonardo Abbene, Marcello Mirabello, Francesco Pintacuda
Summary: High temperature reverse-bias (HTRB) and High temperature gate-bias (HTGB) tests were conducted on planar-SiC power MOSFETs that survived neutron irradiation tests, showing no difference in performance compared to non-irradiated devices. Electrical characterization pre and post-irradiation on different power devices also did not reveal any alteration of electrical parameters due to neutron interaction with the devices.
Article
Engineering, Electrical & Electronic
Cheng-hao Yu, Hao-min Guo, Yan Liu, Xiao-dong Wu, Li-long Zhang, Xin Tan, Yun-cheng Han, Lei Ren
Summary: This paper presents the 2D numerical simulation results of SEB and SEGR in Ga2O3 FP-MOSFETs. The employed simulation models and material parameters were validated by experiments. It was found that the SEB failure was caused by the diffusion of mobile holes into the strong electric field, resulting in a large joule heat power. The SEGR failure was caused by the charge accumulation at the gate channel interface. Furthermore, both SEB and SEGR could be triggered at different voltages, and the severity of the failures increased with increasing voltage. The study also showed that adjusting the field plate extension length could improve the performance of the sensitive regions for both SEB and SEGR.
MICROELECTRONICS RELIABILITY
(2023)
Article
Engineering, Electrical & Electronic
D. R. Ball, K. F. Galloway, R. A. Johnson, M. L. Alles, A. L. Sternberg, A. F. Witulski, R. A. Reed, R. D. Schrimpf, J. M. Hutson, J-M Lauenstein
Summary: Thicker and lightly doped epitaxial region significantly increases the threshold at which ion-induced SEB occurs in SiC power MOSFETs and JBS diodes. Using a 3300V power MOSFET provides a significant increase in SEB threshold margin compared to a 1200V MOSFET, with minor impact on power dissipation during normal operation.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
(2021)
Article
Engineering, Electrical & Electronic
K. Muthuseenu, H. J. Barnaby, K. F. Galloway, A. E. Koziukov, T. A. Maksimenko, M. Y. Vyrostkov, K. B. Bu-Khasan, A. A. Kalashnikova, A. Privat
Summary: This study introduces a design for a 650V super-junction power MOSFET that enhances tolerance to SEB and SEGR. Experimental measurements validate the design accuracy, showing that the trench gate SJ device design improves survivability to SEGR.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Xinfang Liao, Changqing Xu, Yi Liu, Chen Wang, Dongdong Chen, Yintang Yang
Summary: This paper proposes a machine learning based prediction model for the single event burnout (SEB) hardening design. The model utilizes feedforward neural networks to predict the variations in radiation tolerance and critical electrical parameters under complex hardening conditions. By using a search algorithm based on the prediction model, the optimal values of each hardening parameter can be found to obtain the optimal hardening scheme, improving radiation hardness while maintaining acceptable levels of critical electrical parameters. The effectiveness of the proposed prediction model has been successfully verified through TCAD simulations.
MICROELECTRONICS JOURNAL
(2023)
Article
Engineering, Electrical & Electronic
K. Niskanen, R. Coq Germanicus, A. Michez, F. Wrobel, J. Boch, F. Saigne, A. D. Touboul
Summary: The study investigates the mechanisms responsible for neutron-induced single-event burnout in commercial silicon carbide power MOSFETs under atmospheric-like neutron spectrum. Through local analysis of packaged devices, gate stress testing of surviving devices, and TCAD simulations, the enhanced failure sensitivity especially for drain voltage values close to the safe operating area was demonstrated, shedding light on the physical mechanisms related to gate leakage degradation and SEB.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
(2021)
Article
Engineering, Electrical & Electronic
ShiPeng Shangguan, JianWei Han, YingQi Ma, YingHao Wang, PengCheng Liu, Rui Chen, Xiang Zhu
Summary: SiC diodes and MOSFETs were tested using neutron, heavy ions, and pulsed laser separately. The results indicate that neutron displacement damage significantly affects the SEB capabilities of SiC chips, leading to a decrease in SEB threshold laser energies.
MICROELECTRONICS RELIABILITY
(2022)
Article
Computer Science, Information Systems
Seth Roffe, Himanshu Akolkar, Alan D. George, Bernabe Linares-Barranco, Ryad B. Benosman
Summary: This study demonstrates the potential of neuromorphic event-based vision cameras for space applications and shows that radiation has minimal impact on their performance. The research also introduces a simulation environment, Event-RINSE, based on radiation-induced noise modeling, to ensure the cameras can operate in a radiative environment.
Article
Instruments & Instrumentation
Gordana Lastovicka-Medin, Mateusz Rebarz, Gregor Kramberger, Tomas Lastovicka, Jakob Andreasson, Martin Precek, Mauricio Rodriguez-Ramos, Milos Manojlovic
Summary: The effects of highly energetic particles on LGADs need to be considered, as large deposits of energy can cause destructive breakdown. Studies using transient currents technique and ion beam induced charge technique have revealed important findings.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
(2022)
Article
Environmental Sciences
Yang Song, Xiangzheng Tu, Zhengqiang Li
Summary: This study proposes a new method for detecting the atmospheric neutron profile at civil aviation altitude and verifies its reliability through experiments. This is of great significance for SEE analysis in civil aircraft design.
Article
Physics, Applied
Lihao Wang, Yunpeng Jia, Xintian Zhou, Yuanfu Zhao, Liang Wang, Dongqing Hu, Yu Wu, Zhonghan Deng
Summary: A novel SiC double-trench MOSFET with source-recessed structure is proposed and investigated in this paper, showing improved short-circuit withstanding time, single pulse avalanche energy, and threshold voltage for single-event burnout. Compared to the traditional state-of-the-art SiC DT-MOS, it demonstrates great potential for harsh environment applications.
JAPANESE JOURNAL OF APPLIED PHYSICS
(2021)
Article
Instruments & Instrumentation
Travis J. Williams, Gregory J. MacDougall, Bernie W. Riemer, Franz X. Gallmeier, Clarina R. dela Cruz, Despina Louca
Summary: This study proposes a concept to utilize the existing proton accelerator at SNS for both Single Event Effects (SEE) and Muon Spectroscopy (mu SR). The mu SR part will offer the highest flux and resolution pulsed muon beams for material characterization, surpassing other similar facilities. Meanwhile, the SEE capabilities will provide neutron, proton, and muon beams for aerospace industries to certify equipment against atmospheric radiation. This proposed facility, SEEMS, will have significant benefits for both science and industry without impacting the primary neutron scattering mission of SNS.
REVIEW OF SCIENTIFIC INSTRUMENTS
(2023)
Article
Engineering, Electrical & Electronic
Matthew T. M. Littlefair, Sergei Simdyankin, Simon Turvey, Chris Groves, Alton B. Horsfall
Summary: Exposure to ionizing radiation can catastrophically modify and destroy electronic components. SiC, as a material, is less sensitive to cosmic rays compared to Si and has higher reliability, making it a potential replacement for Si in the aviation industry.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2022)
