Journal
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Volume 58, Issue 6, Pages 3317-3320Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2011.2165731
Keywords
Low frequency noise; proton; radiation effect; ReRAM
Funding
- National Research Foundation of Korea (NRF)
- Korea government (MEST) [2011-0018646]
- Ministry of Knowledge Economy
- Ministry of Education Science and Technology (MEST) of Korea [R31-20008-000-10026-0]
- National Research Foundation of Korea [2008-0060067] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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In this study, we investigated proton irradiation effects on resistive random access memory (ReRAM) comprising ZrOx/HfOx stacks. After irradiation, changes of current were observed in the initial state (IS). From the electrical conduction mechanism in the IS, we have concluded that the different initial conditions of the active layer lead to different radiation effects. The radiation-induced leakage paths have been concluded as main origin of the increased leakage current, whereas radiation-induced charge trapping is dominant fact of the decreased leakage current in the IS. From the results of noise analysis in the low resistance state (LRS) and high resistance state (HRS), we observed that the radiation effects became negligible because of the formed local conducting path during forming process.
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