Influence of Back-Gate Bias and Process Conditions on the Gamma Degradation of the Transconductance of MuGFETs

Published 2010 View Full Article

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Title
Influence of Back-Gate Bias and Process Conditions on the Gamma Degradation of the Transconductance of MuGFETs
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Volume 57, Issue 4, Pages 1771-1776
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2010-08-19
DOI
10.1109/tns.2009.2038779

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