Article
Engineering, Electrical & Electronic
Katsuyuki Takagi, Kohei Toyoda, Hiroki Kase, Toshiyuki Takagi, Kento Tabata, Tsuyoshi Terao, Hisashi Morii, Akifumi Koike, Toru Aoki, Mitsuhiro Nogami, Keitaro Hitomi
Summary: This study introduces an X-ray imager using TlBr detectors and demonstrates its potential for imaging applications. The proposed imager, constructed using a combination of existing technologies, shows a high modulation transfer function (MTF) and highlights the need for further optimization of flat-panel detector processes to better suit TlBr detectors.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
(2021)
Article
Nanoscience & Nanotechnology
N. Ganesh, Kelly Schutt, Pabitra K. Nayak, Henry J. Snaith, K. S. Narayan
Summary: A light-excitation-dependent two-dimensional position-sensitive detector using mixed-phase perovskites has been demonstrated, showing a spatially dependent linear variation of the photosignal with high sensitivity and low position detection error. The device architecture plays a key role in controlling the dynamics and linearity of the detectors, making them suitable for applications such as quadrant detectors. The functionality of the detector has been utilized for light-tracking applications with a continuous detection scheme.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Review
Chemistry, Physical
Wenhui Wang, Junpeng Lu, Zhenhua Ni
Summary: The article reviews recent progress in high-performance PSD based on 2D materials, discussing high-sensitive photodetectors and LPE involved in 2D photodetectors, introducing the research progress of PSD based on 2D materials and analyzing carrier dynamics in different device structures, finally summarizing functionalities and applications, as well as highlighting challenges and opportunities in this research area.
Article
Chemistry, Physical
Hao Jiang, Jintao Fu, Changbin Nie, Feiying Sun, Linlong Tang, Jiuxun Sun, Meng Zhu, Jun Shen, Shuanglong Feng, Haofei Shi, Xingzhan Wei
Summary: A position-sensitive detector (PSD) with enhanced position detection performance was proposed using a graphene-silicon-on-insulator (GSOI) structure in this paper. By introducing gate manipulation, the separation efficiency and diffusion speed of photo-induced charges were greatly improved, resulting in a 10-fold increase in generated photocurrent and around 8 times shorter response time compared to the counterpart without modulation. The device concept also provides guidance for improving the performance of other types of two-dimensional materials based PSDs.
Article
Chemistry, Physical
Abu Riduan Md Foisal, Afzaal Qamar, Thanh Nguyen, Toan Dinh, Hoang Phuong Phan, Hung Nguyen, Pablo Guzman Duran, Erik W. Streed, Dzung Viet Dao
Summary: The innovative nanoarchitecture proposed in this work allows for the effective generation, separation, and migration of photogenerated carriers, resulting in ultra-high sensitivity position-sensitive detectors that are self-powered and industry-compatible.
Article
Environmental Sciences
Chengxue Ma, Xiaoliu Huangfu, Yijie Zou, Ruixing Huang, Qiang He, Jun Ma
Summary: This study investigates the kinetics and mechanism of thallium(I) oxidation by permanganate (KMnO4) in the presence of bromide (Br-). The results show that Br- has a significant catalytic effect on the oxidation kinetics of thallium(I) by KMnO4 under acidic conditions, while no significant effect is observed under alkaline conditions. Bromine species including HOBr, Br-2, and Br2O play important roles in catalyzing the oxidation of thallium(I) by KMnO4.
Article
Chemistry, Physical
Xuexia Chen, Xun Yang, Qing Lou, Yongzhi Tian, Zhiyu Liu, Chaofan Lv, Yancheng Chen, Lin Dong, Chong-Xin Shan
Summary: In this study, high-quality g-CN films were successfully grown on Si substrate, demonstrating the potential of g-CN in optoelectronics. The g-CN/Si heterojunction showed high responsivity and a wide response spectrum, leading to the development of photodetectors and position-sensitive detectors. Furthermore, the application of the g-CN/Si heterojunction photodetector in trajectory tracking and acoustic detection was realized for the first time.
Article
Chemistry, Multidisciplinary
Yancheng Chen, Xun Yang, Chongyang Zhang, Gaohang He, Xuexia Chen, Qian Qiao, Jinhao Zang, Wenjie Dou, Pengxiang Sun, Yuan Deng, Lin Dong, Chong-Xin Shan
Summary: This study demonstrates a solar-blind position-sensitive detector (PSD) developed from a graphene/Ga2O3 Schottky junction. Through the use of multibeam interference-enhanced absorption of a nanometer-thick Ga2O3 film, the junction exhibits high responsivity and fast rise/decay time at zero bias. The device not only allows for the measurement of the solar-blind spot position, but also finds applications in angular, displacement, and light trajectory measurements.
Article
Engineering, Multidisciplinary
Mohammad E. Shohani, Ali Olfateh, Seyedmohammad Golgoun, Mojtaba Aminipour
Summary: In this study, a new method for level gauging using a plastic scintillation rod detector and measuring the time difference between photomultiplier tubes was proposed. The results showed significant advantages of this innovative method in calibration, independent of radioactive source activity, reducing the source activity, and improving the accuracy of level measurement by ten times.
Article
Chemistry, Analytical
Jaroslaw Pawluczyk, Mateusz Zbik, Jozef Piotrowski
Summary: We present a detailed description of a Peltier-cooled long-wavelength infrared (LWIR) position-sensitive detector (PSD) based on the lateral effect. This device, which is a modified PIN HgCdTe photodiode forming a tetra-lateral PSD, has a photosensitive area of 1 x 1 mm² and operates at 205 K in the 3-11 μm spectral range. It achieves a position resolution of 0.3-0.6 μm using 10.5 μm 2.6 mW radiation focused on a spot with a diameter of 240 μm, employing a box-car integration time of 1 μs and correlated double sampling.
Article
Nanoscience & Nanotechnology
Xuefeng Zhao, Zeen Zhao, Yingjun Chai, Yecheng Ding, Xiaoming Li, Zhibo Yan, Xinping Zhang, Guoliang Yuan, Junming Liu
Summary: The FA(x)MA(1-x)PbI(3) single crystal exhibits excellent semiconductor photoelectric performance and stability. The study reveals a high macroscopic piezoelectric coefficient within a specific composition range, and a phase transition occurs at x = 0.1-0.125. Using this finding, self-powered X-ray detectors with vertical structures were successfully fabricated, achieving high sensitivity and low detection limit.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Instruments & Instrumentation
Adrien Laviron, Valentin Gourlaouen, Clarisse Hamadache, Corentin Hiver, Jurgen Kiener, Jean Peyre, Vincent Tatischeff
Summary: This paper presents the optimization of position reconstruction algorithms using machine learning for a detector based on a monolithic scintillator and pixelated photodetector. Experimental data and artificial neural networks were used to find that 90% of events at 662 keV facilitate position reconstruction with a 1.8 mm rms error on each axis in the detector plane.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
(2021)
Article
Engineering, Biomedical
Can Yang, Elena Maria Zannoni, Ling-Jian Meng
Summary: In this study, a fully-connected-neural-network-based charge-sharing reconstruction algorithm was proposed to correct charge-loss and estimate sub-pixel position for multi-pixel charge-sharing events. The results showed significant improvement in energy resolution and achievement of sub-pixel resolution for different imaging modalities using pinhole collimator and micro-ring collimator.
PHYSICS IN MEDICINE AND BIOLOGY
(2023)
Article
Engineering, Electrical & Electronic
Tuan-Hung Nguyen, Thanh Nguyen, Abu Riduan Md Foisal, Tuan Anh Pham, Toan Dinh, Hong-Quan Nguyen, Erik W. Streed, Trung-Hieu Vu, Jarred Fastier-Wooller, Pablo Guzman Duran, Van Thanh Dau, Nguyen Nam-Trung, Dzung Viet Dao
Summary: This study presents a position-sensitive detector (PSD) based on the heterojunction formed between n-type SiC and p-type Si, utilizing the lateral photovoltaic effect (LPE) with a linear dependence on laser spot positions. The PSD demonstrates a position sensitivity of 554.82 mV/mm under zero bias conditions, making it one of the most sensitive LPE-based detectors to date. The influence of illumination intensity and wavelength on the position sensitivity is also investigated.
ACS APPLIED ELECTRONIC MATERIALS
(2022)
Article
Physics, Applied
Hung Nguyen, Abu Riduan Md Foisal, Thanh Nguyen, Toan Dinh, Erik W. Streed, Nam-Trung Nguyen, Dzung Viet Dao
Summary: This study investigates the influence of photogenerated holes and their diffusion path lengths on the sensing performance of PSD devices based on 3C-SiC/Si heterostructures. Devices with short electrode spacings demonstrate excellent position-sensitivity, achieving a maximum sensitivity of 470 mV mm(-1) with a device spacing of 300 μm under 980 nm laser illumination. The findings provide insights for designing highly sensitive PSDs and exploring their full potentials.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2021)
