Experimental Study on Electron Mobility in InxGa1-xAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors With In Content Modulation and MOS Interface Buffer Engineering

Title
Experimental Study on Electron Mobility in InxGa1-xAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors With In Content Modulation and MOS Interface Buffer Engineering
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume 12, Issue 4, Pages 621-628
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2013-06-01
DOI
10.1109/tnano.2013.2265435

Ask authors/readers for more resources

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Add your recorded webinar

Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.

Upload Now