Extraction of Channel Electron Effective Mobility in InGaAs/Al $_{\bf 2}$O$_{\bf 3}$ n-FinFETs

Published 2013 View Full Article

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Title
Extraction of Channel Electron Effective Mobility in InGaAs/Al $_{\bf 2}$O$_{\bf 3}$ n-FinFETs
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume 12, Issue 5, Pages 806-809
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2013-07-24
DOI
10.1109/tnano.2013.2274282

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