Journal
IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume 11, Issue 1, Pages 12-15Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNANO.2011.2160458
Keywords
Interface phenomena; nanotechnology; Schottky barriers; semiconductor device doping; surface treatment
Categories
Funding
- U.S. Department of Energy [DE-FG02-00ER45813-A000]
- Nano/Bio Interface Center through the National Science Foundation [IGERT DGE02-21664]
- National Science Foundation
- U.S. Department of Energy (DOE) [DE-FG02-00ER45813] Funding Source: U.S. Department of Energy (DOE)
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With interface sizes rapidly reducing to the nanometer scale, it has become vital to understand how size and structure can affect transport behavior between materials in order to tune the energy barrier for various applications. In this study, the fabrication of Schottky barriers between 20 nm Au nanoparticles and Nb-doped SrTiO(3) substrates is reported. The calculated barrier height and ideality factors are compared for dopant concentrations ranging over three orders of magnitude. The results show that the lowest doped substrates exhibit transport characteristics dominated by thermionic emission while the highest doped substrates are dominated by tunneling and the transition is best described by classical theory with the addition of edge effects to account for nonideal behavior.
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