A Study of Write Margin of Spin Torque Transfer Magnetic Random Access Memory Technology

Large Tunnel Magnetoresistance of 1056% at Room Temperature in MgO Based Double Barrier Magnetic Tunnel Junction

(2009) Lixian Jiang et al.   Applied Physics Express

Study of dielectric breakdown distributions in magnetic tunneling junction with MgO barrier

(2009) Q. Chen et al.   JOURNAL OF APPLIED PHYSICS

Back-hopping after spin torque transfer induced magnetization switching in magnetic tunneling junction cells

(2009) T. Min et al.   JOURNAL OF APPLIED PHYSICS

High-bias backhopping in nanosecond time-domain spin-torque switches of MgO-based magnetic tunnel junctions

(2009) J. Z. Sun et al.   JOURNAL OF APPLIED PHYSICS

Bias-voltage dependence of perpendicular spin-transfer torque in asymmetric MgO-based magnetic tunnel junctions

(2009) Se-Chung Oh et al.   Nature Physics

Electrical time-domain observation of magnetization switching induced by spin transfer in magnetic nanostructures (invited)

(2008) T. Devolder et al.   JOURNAL OF APPLIED PHYSICS

Time-domain studies of very-large-angle magnetization dynamics excited by spin transfer torques

(2008) I. N. Krivorotov et al.   PHYSICAL REVIEW B

Direct Observation of Spin-Torque Driven Magnetization Reversal through Nonuniform Modes

(2008) J. P. Strachan et al.   PHYSICAL REVIEW LETTERS

Perpendicular Spin Torques in Magnetic Tunnel Junctions

(2008) Z. Li et al.   PHYSICAL REVIEW LETTERS