Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 65, Issue 10, Pages 4093-4101Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2018.2865440
Keywords
Anisotropy; black phosphorus (BP); mobility; MOSFETs; phosphorene
Funding
- National Science Foundation (NSF) through the University of Minnesota MRSEC [DMR-1420013]
- Air Force Office of Scientific Research [FA9550-14-1-0277]
- NSF [ECCS-1610333]
- NSF through the National Nanotechnology Coordinated Infrastructure [ECCS-1542202]
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Precise measurements of the mobility anisotropy along high-symmetry crystal axes in black phosphorus (BP) MOSFETs are reported. Locally back-gated BP MOSFETs with 13-nm HfO2 dielectric and channel length ranging from 0.3 to 0.7 mu m are fabricated. A single BP flake of a uniform thickness is exfoliated and etched along armchair (AC) and zigzag (ZZ) crystal axes, and the orientations are confirmed using optical and transmission electron microscopy analyses. The hole and electron mobilities along each direction are extracted using the transfer length method. The AC-to-ZZ hole mobility ratio is found to increase from 1.4 (1.5) to 2.0 (2.9) . as the sheet concentration increased from 5.1 x 10(11) to 1.9 x 10(12) cm(-2) at room temperature (77 K). The room-temperature electron mobility anisotropy is found to be similar to that for holes with an AC-to-ZZ mobility ratio increasing from 1.4 to 2.1 from 5.1 x 10(11) to 1.9 x 10(12) cm(-2) though electrons showed only a very weak temperature dependence. A Boltzmann transport model is used to explain the concentration- and temperature-dependent mobility anisotropies which can be well described using a charge center scattering model.
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